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| NSS60600MZ4T1G 60 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max -60 -100 -6.0 -6.0 -12.0 Unit Vdc Vdc Vdc A A A Y W 60600 G SOT-223 CASE 318E STYLE 1 AYW 60600G 1 B1 E3 http://onsemi.com -60 VOLTS, 6.0 AMPS 2.0 WATTS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 50 mW C 2,4 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 800 6.5 RqJA (Note 1) PD (Note 2) 155 2 15.6 RqJA (Note 2) PDsingle (Note 3) TJ, Tstg 64 710 -55 to +150 Unit mW mW/C C/W W mW/C C/W B mW C 1 C 2 E 3 = Assembly Location = Year = Work Week = Specific Device Code = Pb-Free Package PIN ASSIGNMENT 4 C Top View Pinout ORDERING INFORMATION Device NSS60600MZ4T1G NSS60600MZ4T3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/ Tape & Reel 4000/ Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR- 4 @ 7.6 mm2, 1 oz. copper traces. 2. FR- 4 @ 645 mm2, 1 oz. copper traces. 3. Thermal response. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 1 Publication Order Number: NSS60600MZ4/D NSS60600MZ4T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -100 Vdc, IE = 0) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) (IC = -6.0 A, VCE = -2.0 V) Collector - Emitter Saturation Voltage (Note 4) (IC = -0.1 A, IB = -2.0 mA) (IC = -1.0 A, IB = -0.100 A) (IC = -2.0 A, IB = -0.200 A) (IC = -3.0 A, IB = -60 mA) (IC = -6.0 A, IB = -0.6 A) Base - Emitter Saturation Voltage (Note 4) (IC = -1.0 A, IB = -0.1 A) Base - Emitter Turn-on Voltage (Note 4) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -500 mA, VCE = -10 V, f = 100 MHz) Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = -30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 2.5 PD, POWER DISSIPATION (W) td tr ts tf 100 180 540 145 ns ns ns ns hFE 150 120 100 70 VCE(sat) -0.050 -0.100 -0.050 -0.070 -0.120 -0.250 -0.350 V -1.0 VBE(on) -0.900 fT 100 Cibo Cobo 360 60 pF pF MHz V 360 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -60 -100 -6.0 -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit V VBE(sat) 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 125 150 TJ, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 NSS60600MZ4T1G TYPICAL CHARACTERISTICS 1000 VCE = 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 150C 25C 150C 25C 1000 VCE = 4 V 100 -40C 100 -40C 10 0.001 10 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain 1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150C 0.1 25C -40C 1 IC/IB = 50 Figure 3. DC Current Gain -40C 25C 0.1 150C 0.01 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage 10 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TJ = 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Figure 5. Collector-Emitter Saturation Voltage VBE(on), EMITTER-BASE VOLTAGE (V) VCE = 2 V -40C 1 IC = 6 A 25C 0.1 1A 0.5 A 1.0E-02 1.0E-01 3A 2A 0.1 A 1.0E-03 0.01 1.0E-04 1.0E+00 1.0E+01 0.3 0.2 0.1 0 0.001 150C 0.01 0.1 1 10 IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage http://onsemi.com 3 NSS60600MZ4T1G TYPICAL CHARACTERISTICS 1.2 1.1 VBE(sat), EMITTER-BASE SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 150C 25C -40C 1.2 IC/IB = 10 VBE(sat), EMITTER-BASE SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 -40C IC/IB = 50 25C 150C 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. Base-Emitter Saturation Voltage 900 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 TJ = 25C ftest = 1 MHz 180 160 140 120 100 80 60 40 20 0 0 Figure 9. Base-Emitter Saturation Voltage TJ = 25C ftest = 1 MHz 10 20 30 40 50 60 70 80 90 100 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance 140 fTau, CURRENT BANDWIDTH PRODUCT (MHz) 120 100 80 60 40 20 0 0.001 IC, COLLECTOR CURRENT (A) TJ = 25C ftest = 1 MHz VCE = 10 V 100 Figure 11. Output Capacitance 10 1 ms 0.5 ms 1 10 ms 0.1 100 ms 0.01 0.01 0.1 1 10 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) Figure 12. Current-Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 NSS60600MZ4T1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 A 0.08 (0003) A1 L1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NSS60600MZ4/D |
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